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- XPS Escalab 250 Xi (XPS)
- Physical Electronics 600 AES/SAM
- X-Ray Fluorescence Spectrometer XRF
- XRD #1 Basic Diffraction
- XRD #2 Environmental Diffraction
- XRD #3 Thin Film Diffraction
- Molecular Imaging PicoSPM (STM, AFM)
- Cameca IMS-3F SIMS Ion Microscope
- PHI Adept 1010 Dynamic SIMS System
- General IONIX 1.7 MV Tandetron RBS
- LEICA EM UC7/FC7 Ultramicrotomy
- Zeiss ULTRA-55 FEG SEM
- JEOL JSM-6480 SEM
- FEI 200 TEM FIB
- Renishaw RM 1000B Micro-Raman Spectrometer
- FEI Tecnai F30 TEM
- JEOL TEM-1011
Physical Electronics 600 AES/SAM(Auger Electron Spectroscopy-Scanning Auger Microprobe)
- Elemental composition
- All elements except H and He
- Depth profiling
- No specimen preparation necessary
- UHV compatible solids, 17 mm diameter
AES uses an electron beam to excite a sample, and then measures the energies of secondary electrons emitted. Elemental composition information (and some chemical information) is obtained from the top few atomic layers. AES detects all elements except H and He and is most effective on electrically conductive surfaces. Elemental maps can be constructed from the sample to reveal the spatial distribution of elements on the surface. An attached ion gun allows one to obtain elemental depth profiles from the sample.
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
X-Ray Fluorescence Spectrometer XRF
PANalytical Epsilion
- Elemental composition for elements from Sodium and above
- 50 KV Silver Anode
- Minimal specimen preparation necessary
- Both Solids and Liquids can be analyzed
This system can be used to determine the composition of a sample in atmosphere with minimal sample preparation and time. In addition, the data from the XRF can be imported with XRD data to enhance analysis.
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
XRD #1 Basic Diffraction
PANalytical Empyrean #1
(X-Ray Diffraction)
- 1.8 KW Copper X-ray Tube
- Theta, Theta Goniometer, for Powder and Grazing Incidence Diffraction
- Fixed and Spinning Sample Stages
- X’Celerator Multi-Element Detector for Rapid Data Acquisition
- High Resolution Bragg-Brentano HD Incident Optics for High Resolution
This instrument has been configured for basic X-Ray Diffraction, and can determine the crystal structure and lattice parameters of crystalline materials. The quality of the data is quite high due to the incident beam optics and is suitable for Rietveld Analysis. Both bulk, powder and thin films can be analyzed on this system. The JCPDS database can be used for phase identification of unknown samples.
XRD2: PANalytical Empyrean X-Ray Diffractometer – Environmental Diffraction
- 1.8 KW copper x-ray tube
- Theta-Theta goniometer
- High-temperature/high-vacuum stages for in situ phase-transformation experimentation
- Motorized stage with Z and tilt adjustment
- X’Celerator multi-element detector for rapid data acquisition
- High Resolution Bragg-Brentano HD INcident Optics for High Resolution
XRD2 has been configured to provide the additional analytical techniques of grazing incidence XRD (GIXRD), x-ray reflectometry (XRR), residual stress analysis at room and elevated temperatures. There are also provisions for doing transmission x-ray powder diffraction of small samples, and small angle x-ray scattering (SAXS).
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
XRD3: PANalytical X’Pert3 X-Ray Diffractometer – Thin-film Diffraction
- 1.8 KW copper x-ray tube
- Theta-Theta goniometer
- Eulerian Cradle for motorized phi, psi, X, Y, and Z motion
- PIXCEL multi-dimensional detector for rapid data acquisition
- Poly-capillary, lens, and 2 bounce incident optics
XRD3 was configured with a Eularian stage to provide maximum flexibility over sample positioning to provide high quality data of thin films and textured materials. This allows for in-plane and out of plane grazing incidence XRD, X-ray reflectometry, and reciprocal space mapping. Residual stress analysis by both Chi and Omega offset for bulk material, and Grazing Incidence for multi-hkl of thin films. Also the Poly-Capillary will allow micro-diffraction on small samples.
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
XPS Escalab 250Xi- X-Ray Photoelectron Spectroscopy
- High sensitivity Spectroscopy
- X-ray monochromator as standard
- Small area XPS
- Image resolution <3μm
- Quantitative imaging
- Depth profiling capability
ESCALAB 250Xi is equipped with a micro-focusing X-ray monochromator to deliver optimum XPS performance. Its market-leading sensitivity ensures maximum sample throughout. Parallel XPS imaging is the method of choice for the best lateral resolution, ESCALAB 250Xi provides images having a resolution of <3μm.
The newly developed imaging detector provides “signature-free”, quantitative data. the multi-technique capability and the availability of a range of preparation chambers and devices ensure that the instrument will provide the solution to any surface analytical problem.
Cameca IMS-3F SIMS Ion Microsope
(Secondary Ion Mass Spectrometry)
- Depth resolution: ~5nm
- Lateral resolution: ~1mkm
- Mass resolution (M/delta M): from 200 to more than 10000
- Mass range: 0-250 amu
- Primary ions: O2+, O-, Ar+, Xe+, Cs+ from 5 to 15kV
- Maximum sample size: 1*1*1 cm
- Mass analyzer type: magnetic sector
PHI Adept 1010 Dynamic SIMS System
(Secondary Ion Mass Spectrometry)
- Depth resolution: ~ 1nm
- Lateral resolution: ~ 1mkm
- Mass resolution: ~100
- Mass range: 0-340 amu
- Primary ions: O2+, Ar+, Xe+, Cs+ from 250eV to 8kV
- Scanning electron gun allows for bulk insulators analysis
- Maximum sample size: 5*5*1cm
- Mass analyzer type: quadrupole
SIMS (Secondary Ion Mass Spectrometry) is an analytical technique that is used to characterize the surface and near surface (~30mkm) region of materials. It is capable of detecting practically all elements, including hydrogen (only the noble gases are difficult to measure) with detection limits in ppm range for most elements and ppb range for some. There are several modes of SIMS instrument operation:
- Static SIMS — allows molecular as well as elemental characterization of the first top monolayer.
- Dynamic SIMS — provides for the investigation of bulk composition or the depth distribution of the trace elements.
- Ion imaging — allows lateral imaging and, if combined with depth profiling, -3D compositional reconstruction for heterogeneous samples.
- Isotope ratio measurement — another unique technique of SIMS making it possible to measure isotope ratio with precision of 0.1% and better.
SIMS can be applied to any type of material (insulators, semiconductors, metals, and organic molecules) that can stay under vacuum.
Contact Information
Engineer: Mikhail Klimov (407-882-1509, Mikhail.Klimov@ucf.edu)
General IONIX 1.7 MU Tandetron RBS (Rutherford Backscattering Spectroscopy)
- Depth profiling
- Film thickness
- Stoichiometry
- H, He, and Cs sources
- Accepts planar solids from ~2 x 2 mm to 25 x 25 mm with no more than 15 mm
- Hydrogen Forward Scattering Spectroscopy
RBS analysis is performed by bombarding a sample target with a mono energetic beam of high-energy particles, typically helium, with an energy of a few MeV. Some of the incident atoms scatter backwards from heavier atoms in the near surface region of the target material, and are detected with a solid-state detector that measures their energy. The energy of a backscattered particle is related to the depth and mass of the target atom, while the number of backscattered particles detected from any given element is proportional to the concentration. A depth profile of the upper 1-2 μm of the sample is possible. The depth resolution is 2-30 nm. The lateral resolution is 1 mm and the maximum depth is ~2 μm (20 μm with H+). The primary applications of RBS are the quantitative composition depth profiling of thin film structures. RBS is also used to accurately determine the thickness of thin films if the density of the film is known. Detection limits are 1-10 atomic % for low atomic number elements and 0-100 ppm for high atomic number elements. All elements except H and he may be detected.
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
LEICA EM UC7/FC7 Ultramicrotomy
The high quality microtome for precise room temperature and cryo sectioning.
The Leica EM UC7 prepares excellent quality semi- and ultra-thin sections, as well as the perfectly smooth surfaces required for LM, TEM, SEM, and AFM examination for biological samples, polymer samples, soft materials and composites. The precision mechanics, ergonomic design, and intuitive layout of the touch screen control unit make the Leica EM UC7 ideal for the highest quality specimen preparation by getting tens nanometers thickness.
The Leica EM FC7 provides three different cryo-modes: Standard; High gas flow – increased LN2 gas flow reduces ice contamination below -140°C and Wet sectioning—to set a temperature difference of up to 130°C between knife (-40°C) and specimen (-170°C), which is useful for, e.g., DMSO applications
Contact Information
Engineer: TBA
Zeiss ULTRA-55 FEG SEM (Scanning Electron Microscopy)
- Schottky field emission source
- Resolution 1 nm @ 15 KV, 1.7 nm @ 1 KV
- STEM Detector
- In lens Secondary and Backscatter detectors
- Noran System 7 EDS with Silicon Drift Detector x-ray detector
- Nabity Electron Beam Lithography System
The Zeiss Ultra-55 SEM has a unique design to the final lens; it is electrostatic instead of electromagnetic. This feature allows the microscope to image magnetic materials without distortion from created by a magnetic field. This microscope is also capable of delivering very high lateral resolution at low voltages. The Nabity Electron Beam Lithography system allows researchers to create nanometer scale patterns using the pattern generator in conjunction with the electron beam. The Noran System 7 EDS system with Silicon Drift Detector can acquire the EDS spectrum much faster that a conventional SiLi detector and can detect elements as light as Boron.
Contact Information
Engineer: Kirk Scammon (407-882-1514, Kirk.Scammon@ucf.edu)
JEOL JSM-6480 SEM (Scanning Electron Microscopy)
- Variable pressure SEM
- Secondary Electron resolution: 30 nm (High Vacuum mode)
- Back-scattered Electron resolution: 50 nm (Variable Pressure mode)
- X15 to x300,000 magnification
- Accelerating Voltage: 0.3 to 30 kV
- Specimen size: 150mm diameter Maximum
- Backscattered Electron Detector
- Infrared ChamberScope
The JEOL JSM-6480 SEM provides a variable pressure mode of operation that allows microscopy of damp, oily and non-conductive samples. It has a unique differential pumping system with a real-time vacuum feedback (RVF) for VP mode. This SEM has automated functions for filament saturation, gun alignment, brightness, contract and stigmatism.
FEI 200 TEM FIB (Focused Ion Beam Instrument)
- 30 kV gallium liquid metal ion source
- Accepts specimens up to 5 cm diameter
- Ion beam assisted platinum deposition
- Iodine enhanced etch
- Selective carbon mill etch
- Secondary electron and ion images
The 200 TEM FIB removes material by sputtering using gallium at lateral resolution of approximately 5 nm. Platinum metal can also be deposited by ion beam assisted chemical vapor deposition. Gas assisted etching and selective carbon milling may also be performed. FIB has a wide range of applications:
- Specimen preparation for SEM and TEM. TEM cross-section specimens can be prepared within two hours.
- Ion channeling contrast imaging
- Device modification – mainly semi-conductor industry
Micro machining – example: trimming AFM tips or drilling patterns to make optical grating or optical lenses
Contact Information
Engineer: TBA
Renishaw RM 1000B Micro-Raman Spectrometer
- Imaging CCD Detector
- Ar-514nm Excitation Unit
Raman spectroscopy is a spectroscopic technique to study vibrational, rotational, and other low-frequency modes. It relies on inelastic scattering, or Raman scattering of monochromatic light, usually from a laser in the visible, near infrared, or near ultraviolet range. The laser light interacts with phonons or other excitations in the system, resulting in the energy of the laser photons being shifted up or down. The shift in energy gives information about the phonon modes in the system. Raman spectroscopy offers several advantages for microscopic analysis. Since it is a scattering technique, specimens do not need to be fixed or sectioned. Raman spectra can be collected from a very small volume (< 1 μm in diameter); these spectra allow the identification of species present in that volume. Water does not interfere very strongly. Thus, Raman spectroscopy is suitable for the microscopic examination of minerals, materials such as polymers and ceramics, cells and proteins.
Contact Information
Engineer: Mikhail Klimov (407-882-1509, Mikhail.Klimov@ucf.edu)
FEI Tecnai F30 TEM (Transmission Electron Microscope)
- 0.20 nm point-to-point resolution in TEM mode
- 0.14 nm point-to-point resolution in STEM mode
- Information limit <0.1 nm
- Heating and cryo-stages for in situ experimentation
- Gatan Multiscan 794 digital camera
- HAADF/ADF/BF STEM Detectors
- GIF200 Electron energy loss spectrometer
- Gatan image filter (GIF) for EFTEM elemental mapping
- 300, 200, 120 kV accelerating voltages available
- MacTempas software for image analysis and HRTEM/HRSTEM simulations
The FEI Tecnai F30 is an analytical electron microscope (AEM), which can function as a conventional transmission electron microscope (TEM) or a scanning transmission electron microscope (STEM). It has a field emission gun (FEG) and it can operate up to an accelerating voltage of 300KV. It includes both an energy dispersive x-ray detector (XEDS) and an electron energy loss spectrometer for elemental analysis. The probe size can be reduced to <0.2 nm for chemical analysis and nano-diffraction studies.
Contact Information
Engineer: Mikhail Klimov (407-882-1509, Mikhail.Klimov@ucf.edu)
JEOL TEM-1011(Transmission Electron Microscope)
- Tungsten or LaB6 filament with Cool Beam Illumination System
- 0.4 nm point-to-point resolution
- Computer controlled electron optical system
- Digital image acquisition and processing
JEM-1011 is a simple, dependable imaging instrument for high throughput of images with excellent contrast and definition. With an acceleration voltage flexibility of 40 to 100kV, it is suitable for all biological, polymer and thin materials science specimens. Its high contrast objective lens pole piece combines the highest possible contrast and brightness with optimum resolution. The JEOL patented cool beam gun allows high-brightness, high coherence illumination conditions with filament-saving low emission current. JEM-1011 has a unique feature of 2-specimen holder where two specimens are introduced into the column at the same time in the “Quick Change” holder, facilitating fast imaging throughput and instant comparison under the same operating conditions. Other features include user friendly controls, file storage, and automatic filament heating.
Contact Information
Engineer: Mikhail Klimov (407-882-1509, Mikhail.Klimov@ucf.edu)